Annealing of Total Dose Damage in the Z8OA Microprocessor
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4251-4255
- https://doi.org/10.1109/TNS.1983.4333117
Abstract
Very large annealing rates have been observed for total dose damage in a commercial microprocessor. The annealing behavior has a complex dependence on bias conditions and dose rate, and persists for time periods in excess of 106 s. With positive bias applied, super recovery of the gate threshold voltage occurs so that the voltage shift at long times is opposite to that observed at short times after irradiation. These effects can cause large errors in total dose testing, and need to be carefully considered when planning tests on LSI devices.Keywords
This publication has 6 references indexed in Scilit:
- Annealing of MOS Capacitors with Implications for Test Procedures to Determine Radiation HardnessIEEE Transactions on Nuclear Science, 1981
- Total Dose Response of the Z80A and Z8002 MicroprocessorsIEEE Transactions on Nuclear Science, 1981
- Interface-State Generation in Radiation-Hard OxidesIEEE Transactions on Nuclear Science, 1980
- Total Dose Failure Levels of Some VlsicsIEEE Transactions on Nuclear Science, 1980
- Temperature- and Field-Dependent Charge Relaxation in SiO2 Gate InsulatorsIEEE Transactions on Nuclear Science, 1978
- Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient AnnealingIEEE Transactions on Nuclear Science, 1975