Zn1−xCoxSe: A new diluted magnetic semiconductor grown by molecular beam epitaxy
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (5) , 450-452
- https://doi.org/10.1063/1.99895
Abstract
We have grown single‐crystal epilayers of the new diluted magnetic semiconductor Zn1−xCox Se on GaAs(001) substrates by molecular beam epitaxy. X‐ray θ‐2θ and double‐crystal rocking curve measurements were used to obtain the variation in lattice parameter and evaluate crystalline quality. Temperature‐dependent electron paramagnetic resonance and superconducting quantum interference device magnetometry data confirm the substitutional nature of the Co2+ in the zinc site and paramagnetic behavior.Keywords
This publication has 19 references indexed in Scilit:
- Nonmagnetic ground state ofin CdSe: Absence of bound magnetic polaronPhysical Review Letters, 1988
- Epitaxial growth and x-ray structural characterization of Zn1−xFexSe films on GaAs(001)Journal of Vacuum Science & Technology A, 1988
- Magnetoreflectivity study of excitons in molecular-beam epitaxially grown Zn1−xFexSe crystalsJournal of Vacuum Science & Technology A, 1988
- The study of s-d exchange interaction in ZnFeSe semimagnetic semiconductorSolid State Communications, 1987
- Band structure and electronic properties of mercury chalcogenide alloys containing ironJournal of Vacuum Science & Technology A, 1987
- Reduction of charge-center scattering rate inSePhysical Review B, 1987
- Semimagnetic semiconductorsAdvances in Physics, 1984
- Giant Spin Splitting of Exciton States in ZnSe with Mn and Fe ImpuritiesPhysica Status Solidi (b), 1980
- Spin Hamiltonian ofPhysical Review Letters, 1960
- Paramagnetic Resonance and Optical Spectra of Divalent Iron in Cubic Fields. I. TheoryPhysical Review B, 1960