Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
- 1 January 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (1) , 1-6
- https://doi.org/10.1007/s11664-997-0123-7
Abstract
No abstract availableKeywords
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