Recent progress in electronic properties of quasi-two-dimensional systems
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 333-340
- https://doi.org/10.1016/0039-6028(76)90160-6
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- Effects of higher sub-band occupation in (100) Si inversion layersPhysical Review B, 1976
- Localization and the Minimum Metallic Conductivity in Si Inversion LayersPhysical Review Letters, 1975
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Peaked structure in field-effect mobility of silicon MOS transistors at very low temperaturesApplied Physics Letters, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Fluctuations and Physical Properties of the Two-Dimensional Crystal LatticePhysical Review B, 1971
- gFactors for an Interacting Electron GasPhysical Review B, 1969
- Low temperature effects in Si FETsSolid-State Electronics, 1965
- Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron GasPhysical Review B, 1961
- Effects of the electron interaction on the energy levels of electrons in metalsTransactions of the Faraday Society, 1938