Temperature dependence of cathodoluminescence in n-type gallium arsenide
- 1 January 1974
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 7 (1) , 183-193
- https://doi.org/10.1088/0022-3727/7/1/326
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- Doping Dependence of Hole Lifetime in n-Type GaAsJournal of Applied Physics, 1971
- Spectral distribution of the spontaneous emission from electron-beam-excited semiconductor lasers using n-type GaAs†International Journal of Electronics, 1971
- Monte Carlo Calculations of the Electron-Sample Interactions in the Scanning Electron MicroscopeJournal of Applied Physics, 1971
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Electron scattering in thick targetsBritish Journal of Applied Physics, 1967
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- The kinetics and efficiency of cathodoluminescenceBritish Journal of Applied Physics, 1962
- Sur les bases physiques de l'analyse ponctuelle par spectrographie XJournal de Physique et le Radium, 1955
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954