Integrating infra-red detector with electronically modulated response
- 8 December 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (25-26) , 1070-1071
- https://doi.org/10.1049/el:19830726
Abstract
A new integrating IR detector exhibits equivalent dark currents as low as 1.2 × 10−15 A/cm2. Signal integration takes place in the bulk of a semiconductor photosensitive element. The ultralow dark current permits very long integration and storage times. Integration times longer than 12 h are reported. IR response beyond the usual low field cutoff is observed and shown to depend strongly on the applied electric field. This allows voltage-controlled starting and stopping of in situ signal integration beyond the low field cutoff wavelength.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 2 Impurity Germanium and Silicon Infrared DetectorsPublished by Elsevier ,1977