Electrical properties of Te-Si heterojunctions†
- 1 March 1972
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 32 (3) , 315-320
- https://doi.org/10.1080/00207217208938294
Abstract
The electrical properties of Te(p)-Si(n) hetorodiodes are investigated at room and liquid air temperatures. The heterojunotion is formed between an evaporated Te film and an n-type Si single crystal substrate. The forward and reverse characteristics are explained on the basis of an energy band diagram similar to Ge—GaAs and a tunnelling mechanism. The capacitativo eut-off voltage and current cut-off voltage, at room temperature, are found to be about 0·7 v. Preliminary indications are that such a heterojunction is sensitive to I.E. radiation.Keywords
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