High-temperature contact structures for silicon semiconductor devices
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6) , 540-542
- https://doi.org/10.1063/1.91978
Abstract
While thin films of TiN and TaN are good diffusion barriers in contact structures which use nickel or gold as a top layer, they show poor barrier properties if aluminum is used as a top layer. It is shown in this letter that stable high‐temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.Keywords
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