Closed-flux elements for integrated magnetic memories
- 1 September 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 8 (3) , 597-599
- https://doi.org/10.1109/tmag.1972.1067350
Abstract
A description of the design and technology of batch-fabricated core-like memory elements is presented. A bottom FeSi and a top NiFe layer form a closed-flux path encircling two mutually insulated conductor layers. All layers are deposited on a silicon chip and structured by photolithographic techniques. The compatibility with integrated circuits is pointed out. Element densities may be as high as 20 000/cm2. Due to the small dimensions, currents are below 50 mA with a switching time of about 100 ns. The output voltage is between 5 and 10 mV.Keywords
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