0.25 × 106bit/in2NDRO coupled film memory elements
- 1 December 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 6 (4) , 774-778
- https://doi.org/10.1109/tmag.1970.1066989
Abstract
The fabrication and operation of high-density (0.25 & 106bit/in2) nondestructive readout (NDRO) memory elements are described. The high density is made possible by coupled films and Permalloy keeper. The NDRO is made possible by multiple-pulse WRITE or hard-direction bias field. Typical performance parameters areI_{w} = 60mA,I_{b} = 30mA, andV_{s} = 150&V/3 ns. The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organization, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration.Keywords
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