Deep-impurity-level spectroscopy at the GaAs epilayer/substrate interface, using a new constant-capacitance TSCAP method
- 1 November 1975
- journal article
- research article
- Published by Taylor & Francis in C R C Critical Reviews in Solid State Sciences
- Vol. 5 (4) , 485-489
- https://doi.org/10.1080/10408437508243508
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Thermally Stimulated Capacitance and Thermally Stimulated Current in ap-nJunction with Generation-Recombination CentersJapanese Journal of Applied Physics, 1973
- Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rateSolid-State Electronics, 1972