Influence of H2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12A) , L877
- https://doi.org/10.1143/jjap.23.l877
Abstract
The influence of H2 overpressure on the electrical and optical properties of GaAs epitaxial layer grown by the low-pressure MOCVD of TMG/AsH3/H2 system was studied. It was demonstrated that high H2 overpressure was not necessary in the reaction process to reduce carbon contamination for low-pressure MOCVD. The carbon incorporation process in low-pressure MOCVD was discussed briefly.Keywords
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