Very low resistance ohmic contacts to n-GaN
- 1 July 1998
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (7) , 829-832
- https://doi.org/10.1007/s11664-998-0104-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaNApplied Physics Letters, 1997
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- A bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsApplied Physics Letters, 1996
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- Growth of fcc Fe films on diamondApplied Physics Letters, 1994
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Recent developments in ohmic contacts for III–V compound semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947