Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2

18 March 2002

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 80 (11) , 1957-1959
https://doi.org/10.1063/1.1448169

Abstract

Electron spin resonance on (100)Si/SiOx/ZrO2 and (100)Si/Al2O3/ZrO2 stacks with nm-thin dielectric layers reveals the Si dangling-bond-type centers Pb0, Pb1 as prominent defects at the (100)Si/dielectric interface. This Pb0, Pb1 fingerprint indicates that, while gratifying for the Si/SiOx/ZrO2 case, the as-deposited (100)Si/Al2O3 interface is basically Si/SiO2-like. The interfaces are in an enhanced (unrelaxed) stress state, characteristic of low-temperature Si/SiO2 growth. Based on the Pb0, Pb1 criterion, standard thermal Si/SiO2 interface properties may be approached by appropriate annealing (⩾ 650 °C) in vacuum in the case of Si/SiOx/ZrO2. Yet, O2 ambient is required for Si/Al2O3, indicating that the initial abruptness of the interface prevents thermal adaptation to occur until an additional SiOx interlayer grows. A minimal SiOx interlayer thickness (≳0.5 nm) appears requisite.

Keywords

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