Influence of dislocations on vertical ordering of Ge islands in Si/Ge multilayers grown by low pressure chemical vapour deposition
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (6) , L21-L23
- https://doi.org/10.1088/0268-1242/14/6/101
Abstract
No abstract availableKeywords
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