Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100)
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 5840-5844
- https://doi.org/10.1063/1.367441
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at EquilibriumPhysical Review Letters, 1997
- Size distribution of Ge islands grown on Si(001)Applied Physics Letters, 1997
- Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAsApplied Physics Letters, 1997
- Infrared ellipsometry on hexagonal and cubic boron nitride thin filmsApplied Physics Letters, 1997
- Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactorApplied Physics Letters, 1997
- Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAsApplied Physics Letters, 1997
- Radar polarimetry applied to scattering from irregular layered mediaJournal of the Optical Society of America A, 1996
- Spectroscopic ellipsometry of germanium growth on hydrogen-terminated silicon (111)Applied Physics Letters, 1996
- Origin of Self-Assembled Quantum Dots in Highly Mismatched HeteroepitaxyPhysical Review Letters, 1995
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979