Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor
- 17 February 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (7) , 892-894
- https://doi.org/10.1063/1.118306
Abstract
The optical functions of amorphous and polycrystallinesiliconthin filmsdeposited on single oxidizedsilicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopicellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the filmstructure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.Keywords
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