Optimization of the polycrystalline silicon-on-silicon dioxide characterization using spectroscopic ellipsometry
- 1 October 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 233 (1-2) , 210-213
- https://doi.org/10.1016/0040-6090(93)90092-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Characterization of polycrystalline silicon thin‐film multilayers by variable angle spectroscopic ellipsometrySurface and Interface Analysis, 1992
- Nondestructive depth profiling by spectroscopic ellipsometryApplied Physics Letters, 1985
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984