Nondestructive depth profiling by spectroscopic ellipsometry
- 15 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4) , 339-341
- https://doi.org/10.1063/1.96156
Abstract
It is shown that spectroscopic ellipsometry (SE) studies followed by the regression analysis of the SE data can yield information nondestructively and in a nonperturbing manner on the depth profile of multilayer structure; such as (i) quantitative information on the thickness and the dielectric function of each layer, (ii) the structure (whether crystalline or amorphous) as well as the degree of crystallinity of each layer, (iii) characterization of the oxide layer if present on the specimen, and (iv) microroughness of the surface, if present. Furthermore, it is shown that these results are in excellent agreement with the results obtained on the same specimens using cross-section transmission electron microscopy.Keywords
This publication has 8 references indexed in Scilit:
- The Characterization Of Materials By Spectroscopic EllipsometryPublished by SPIE-Intl Soc Optical Eng ,1984
- Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductorsApplied Physics Letters, 1981
- In Situ Measurement and Analysis of Plasma‐Grown GaAs Oxides with Spectroscopic EllipsometryJournal of the Electrochemical Society, 1980
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979
- Optical Properties of the Interface between Si and Its Thermally Grown OxidePhysical Review Letters, 1979
- High Precision Scanning EllipsometerApplied Optics, 1975
- Optimizing precision of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935