Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductors
- 15 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (4) , 316-318
- https://doi.org/10.1063/1.92705
Abstract
Chemical etching and cleaning procedures that produce the most abrupt dielectric discontinuities between bulk and ambient (cleanest and/or smoothest surfaces) are determined by ellipsometry for single crystals of Si, Ge, and some III‐V compounds. Differences among high‐symmetry orientations for Si and Ge indicate that preferential etching may be a factor in minimizing the amount of interface material left at a surface.Keywords
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