Electronic structure of CdTe(110) as studied by angle-resolved photoemission
- 15 March 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (8) , 5276-5281
- https://doi.org/10.1103/physrevb.39.5276
Abstract
Photoemission energy distributions from cleaved CdTe(110) surfaces have been measured in the Γ¯ X¯ and Γ¯ Y¯ azimuths for photon energies of 16.8 and 21.2 eV. Using a semiempirical band calculation, we were able to sort out the origin of the observed structures in terms of direct and indirect excitations in the bulk as well as contributions from the surface.Keywords
This publication has 8 references indexed in Scilit:
- Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energiesPhysical Review B, 1986
- Angle-resolved photo-emission from the cleaved (110) surface of cadmium tellurideJournal of Physics C: Solid State Physics, 1986
- Interpretation of low-energy Auger spectra from AlAs and GaAs(001): Applications to surface preparationPhysical Review B, 1985
- Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substratesJournal of Applied Physics, 1983
- Studies of clean and adatom treated surfaces of II–VI compoundsJournal of Crystal Growth, 1982
- Angle-resolved uv photoemission and electronic band structures of the lead chalcogenidesPhysical Review B, 1978
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and AglPhysical Review B, 1974