Angle-resolved photo-emission from the cleaved (110) surface of cadmium telluride
- 20 March 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (8) , 1259-1271
- https://doi.org/10.1088/0022-3719/19/8/022
Abstract
Angle-resolved photo-emission studies have been carried out for the (110) cleaved surface of cadmium telluride, using He I radiation (21.2 eV) as the light source. The experimental peak dispersions have been mapped for two major symmetry directions namely, Gamma X' (001) and Gamma X (100) of the two-dimensional surface Brillouin zone. Good agreement has been obtained between peak positions observed experimentally and those determined by a one-dimensional joint density of states (ODJDOS) calculation based on the authors' semi-empirical nonlocal pseudopotential scheme. Specifically, they account for all the prominent emission features due to bulk valence band states in terms of k-conserving optical transitions. It has also been demonstrated that the experimental bulk emission peak positions and intensities may be successfully explained in a first-order approximation, in terms of the three-step model based on the nonlocal pseudopotential theory for initial and final states. The contribution from surface states on the (110) cleaved surface of cadmium telluride is also discussed.Keywords
This publication has 25 references indexed in Scilit:
- Studies of clean and adatom treated surfaces of II–VI compoundsJournal of Crystal Growth, 1982
- Angle-resolved and -integrated photoemission from a ZnSe (110) surfaceJournal of Vacuum Science and Technology, 1981
- Angle-resolved photoemission, valence-band dispersions, and electron and hole lifetimes for GaAsPhysical Review B, 1980
- Angle-resolved photoemission and valence band dispersions for GaAs: Direct vs indirect modelsSolid State Communications, 1979
- Valence Band Structure of PbS from Angle-Resolved PhotoemissionPhysical Review Letters, 1977
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Reflectivities and Electronic Band Structures of CdTe and HgTePhysical Review B, 1972
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Photoemission Studies of Copper and Silver: ExperimentPhysical Review B, 1964
- Fundamental Reflectivity and Band Structure of ZnTe, CdTe, and HgTePhysical Review B, 1963