High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Hydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.Keywords
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