Static Characteristics of Piezoelectric Thin Film Buckling Actuator
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S) , 5012-5014
- https://doi.org/10.1143/jjap.35.5012
Abstract
We have developed a diaphragm piezoelectric microactuator. The diaphragm consists of a Pb(Zr, Ti)O3 (PZT) thin film, electrode layers, an isolation layer and a Si substrate. The diaphragm is deflected by transverse stress in the PZT thin film which is fabricated by a sputtering and annealing process. The PZT thin film has a piezoelectric coefficient d 31 of -100 pC/N, which is comparable to that of bulk PZT. A diaphragm deflection of 3 µ m was obtained at an electric field of 16 V/µm.Keywords
This publication has 3 references indexed in Scilit:
- Lead zirconate titanate films by rapid thermal processingApplied Physics Letters, 1991
- Thin-film ZnO as micromechanical actuator at low frequenciesSensors and Actuators A: Physical, 1990
- Characterization of Pb(Zr,Ti)O3 thin films deposited from multielement metal targetsJournal of Applied Physics, 1988