Grazing-incidence diffraction from multilayers
- 15 June 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (23) , 16848-16859
- https://doi.org/10.1103/physrevb.51.16848
Abstract
Grazing-incidence diffraction from superlattices has been described by a distorted-wave Born approximation. Using the example of a GaAs/AlAs superlattice, the influence of specular interface reflection on the diffraction pattern has been investigated experimentally and well explained by the theoretical treatment. A comparison with the dynamical theory and parallels with the x-ray reflectivity is given. Real-structure effects such as misorientation, interface roughness, or graduated heterotransitions have also been taken into consideration.Keywords
This publication has 20 references indexed in Scilit:
- A matrix approach to grazing-incidence X-ray diffraction in multilayersZeitschrift für Physik B Condensed Matter, 1995
- The influence of specular interface reflection on grazing incidence X-ray diffraction and diffuse scattering from superlatticesPhysica B: Condensed Matter, 1994
- Grazing incidence diffraction of X-rays in semiconductor heterostructures: Application of the integral modeZeitschrift für Physik B Condensed Matter, 1990
- Grazing incidence diffraction of X-rays at a Si single crystal surface: Comparison of theory and experimentZeitschrift für Physik B Condensed Matter, 1987
- Extremely skew X-ray diffractionActa Crystallographica Section A Foundations of Crystallography, 1986
- Diffraction of evanescent x-rays: Results from a dynamical theoryPhysical Review B, 1985
- Bragg-Laue diffraction in inclined geometryPhysica Status Solidi (a), 1984
- X-ray diffraction under specular reflection conditions. Ideal crystalsActa Crystallographica Section A Foundations of Crystallography, 1983
- Grazing-incidence diffraction and the distorted-wave approximation for the study of surfacesPhysical Review B, 1982
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979