Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2A) , L195
- https://doi.org/10.1143/jjap.29.l195
Abstract
The influence of the Si substrate preparation method on the carrier concentration profile at the Si MBE layer/p-Si substrate interface was studied. It was found that the Si substrate should be placed in the UHV MBE chamber immediately (within 10 minutes) after removal of the oxide layer to eliminate the p+ interface layer and must be heated up to 1250°C before MBE growth, in order to prevent carrier depletion at the interface and also to obtain good I-V characteristics of a diode with a Silicide/p-Si (or SiGe) MBE layer/p-Si substrate structure.Keywords
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