Reduction of the Barrier Height of Silicide/p-Si1-xGex Contact for Application in an Infrared Image Sensor
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A) , L544
- https://doi.org/10.1143/jjap.28.l544
Abstract
Silicide/p-Si1-x Ge x Schottky contacts were studied for using in an infrared (IR) image sensor. Si1-x Ge x layers were grown on p-type (100) Si substrates by using molecular beam epitaxy (MBE). Schottky barrier heights of PtSi(Ge) or PdSi(Ge)/p-Si1-x Ge x contacts decreased as the Ge content increased. When the Si1-x Ge x layer was strained, the barrier height was smaller than when relaxed for the same value of x. These results suggest the possibility of a long wavelength (8–12 µm) IR image sensor using a silicide/p-Si1-x Ge x Schottky contact for the strained layer monolithically grown on a p-Si CCD substrate.Keywords
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