Enhanced Glide of Dislocations in GaAs Single Crystals by Electron Beam Irradiation

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Abstract
Influence of 30 keV electron beam irradiation on the mobility of α-dislocations in n-GaAs has been investigated at temperatures between 290 K and 470 K under a shear stress of 40 MN/m2 using a scanning electron microscope with cathodoluminescence mode. The effect of electron irradiation (0.39 A/m2) is equivalent to a temperature rise of 80–180 K in the testing temperature range, which is not explained by a heating effect of the lattice by the irradiation. The activation energy of the dislocation motion is decreased from 0.95 eV to ∼0.24 eV by the irradiation. The effect is explained in terms of recombination-enhanced glide of dislocations.