Electron tunneling in GaAs/AlGaAs heterostructures
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (4) , 371-376
- https://doi.org/10.1109/jqe.1987.1073352
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- An empirical pseudopotential analysis of (100) and (110) GaAs-AlxGa1-xAs heterojunctionsJournal of Physics C: Solid State Physics, 1986
- Observation of negative differential resistance in CHIRP superlatticesElectronics Letters, 1985
- Electron scattering from heterojunctionsJournal of Physics C: Solid State Physics, 1984
- Model effective-mass Hamiltonians for abrupt heterojunctions and the associated wave-function-matching conditionsPhysical Review B, 1984
- On the interface connection rules for effective-mass wave functions at an abrupt heterojunction between two semiconductors with different effective massJournal of Vacuum Science and Technology, 1982
- Demonstration of a new oscillator based on real-space transfer in heterojunctionsApplied Physics Letters, 1982
- Electronic Structures of GaAs-Repeated Monolayer HeterostructurePhysical Review Letters, 1977
- Band structure of semiconductor superlatticesPhysical Review B, 1975
- Direct Observation of Superlattice Formation in a Semiconductor HeterostructurePhysical Review Letters, 1975
- Space-Charge Effects on Electron TunnelingPhysical Review B, 1966