Hall-Effect Measurement on Polycrystalline SnO2 Thin Films

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Abstract
Hall-effect measurements of F-doped polycrystalline SnO2 thin films have been performed in the temperature range from 4.2 to 300 K with samples having different sizes of grains involved in the material. The carrier concentration and mobility have been analyzed in terms of the transport mechanism in a degenerate semiconductor. From a comparison between the calculated and experimental carrier concentration, we have obtained the results that the effective mass of electrons is 0.935 m 0 and that the position of the Fermi level in the conduction band varies from 0.269 to 0.224 eV for a change in the carrier concentration from 5.70 to 4.31 (× 1020 cm-3). Based on an analysis of the Hall mobility, it has been found that scattering by neutral and ionized impurities dominates the mobility and that both the impurities are localized at grain boundaries involved in polycrystalline SnO2 films.