Mesotaxy by nickel diffusion into a buried amorphous silicon layer
- 20 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 12 (1-2) , 103-106
- https://doi.org/10.1016/0921-5107(92)90267-d
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–ZrJournal of Materials Research, 1990
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Lattice imaging of silicide-silicon interfacesThin Solid Films, 1982
- Epitaxial silicidesThin Solid Films, 1982