Generation and annealing behaviour of MeV proton and /sup 252/Cf irradiation induced deep levels in silicon diodes
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 479-486
- https://doi.org/10.1109/23.299783
Abstract
[4] J. Vanhellemont et al. IEEE Trans. Nucl. Sci., 41 (3), p.479 (1994). doi:10.1109/23.29978Keywords
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