Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon

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Abstract
Isothermal annealing of electron-irradiated Czochralski silicon samples (n-type) has been performed at 335 °C. The annealing process was studied using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The dominating level in the DLTS spectra directly after irradiation is located ∼0.18 eV below the conduction band and has previously been assigned to a vacancy-oxygen center by other authors. During the anneal the concentration of vacancy-oxygen centers decreases, and simultaneously a new level, ∼0.20 eV below the conduction band, grows up. It is shown that the defect giving rise to this new level may be vacancy related. The PL spectra directly after irradiation are dominated by the G line (969 meV) and the C line (790 meV). The G line disappears rapidly, while the C line is still present after 320 min at 335 °C. During the heat treatment some new lines appear, e.g., the P line (767 meV) and a line at 950 meV. Based on the annealing kinetics, it is speculated that the 950-meV defect may be vacancy related.