Oxide and nitride conduction mechanisms in MNOS structures
- 1 December 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 14 (2) , 211-219
- https://doi.org/10.1016/0040-6090(72)90423-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Trapping levels in silicon nitrideElectronics Letters, 1968
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968
- The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structuresSolid-State Electronics, 1967
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967