Processing of PZT piezoelectric thin films for microelectromechanical systems
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 683-686
- https://doi.org/10.1109/isaf.1996.598112
Abstract
Piezoelectric Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/ (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4" wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl/sub 2//CCl/sub 4/ mixtures could be used to etch PZT with an etching rate of 100/spl sim/150 /spl Aring//min, and HCFC-124 with a rate of 320 /spl Aring//min.Keywords
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