Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Formation of Epitaxial Twins by Perfluoro-N-Alkane Evaporated on Alkali Halide CrystalJapanese Journal of Applied Physics, 1995
- Preparation of PZT thin films by MOCVD using a new Pb precursorIntegrated Ferroelectrics, 1995
- Effects of the utilization of a buffer layer on the growth of Pb(Zr, Ti)O3 thin films by metalorganic chemical vapor depositionJournal of Crystal Growth, 1994
- Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2Applied Physics Letters, 1994
- Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer LayerJapanese Journal of Applied Physics, 1994
- Thin Film Growth of Pb(Zr, Ti)O3 by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO2Japanese Journal of Applied Physics, 1993
- Structural evaluation of epitaxially grown organic evaporated films by total reflection x-ray diffractometerJournal of Applied Physics, 1993
- In-Situ X-Ray Observation of Molecular Structure in Organic Thin Films during Evaporation Process by Total Reflection In-Plane X-Ray DiffractometerJapanese Journal of Applied Physics, 1992
- Growth of Pb(Zr, Ti)O3 Thin Films by Photoenhanced Chemical Vapor Deposition and Their PropertiesJapanese Journal of Applied Physics, 1992
- New Evaluation Method of Evaporated Organic Thin Films by Energy Dispersive X-Ray DiffractometerJapanese Journal of Applied Physics, 1987