ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (3) , 103-106
- https://doi.org/10.1063/1.1653112
Abstract
A useful method of calculating the energy/unit depth deposited in atomic processes by energetic ions in solids is presented. The calculated energy density is shown to correlate well with previous Monte Carlo calculations of the vacancy concentration resulting from ion bombardment and recent experimental measurements of the depth distribution of ion damage. The method also provides the depth distribution of ions in the solid as a function of their energy during the stopping process. This information would allow, for example, calculation of the location and rate of various energy‐dependent interactions between incident ions and host atoms.Keywords
This publication has 6 references indexed in Scilit:
- Partition of the Average Energy Deposited in Germanium as a Function of Incident Neutron EnergyPhysical Review B, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- Partition of the Average Energy Deposited in Silicon as a Function of Incident Neutron EnergyPhysical Review B, 1967
- Nature of Ferroelectricity in KNPhysical Review B, 1967
- Pulse Height Defect and Energy Dispersion in Semiconductor DetectorsReview of Scientific Instruments, 1966
- Ionization Produced by Energetic Silicon Atoms within a Silicon LatticePhysical Review B, 1965