Femtosecond optical gain in strongly confined quantum dots
- 15 July 1996
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 21 (14) , 1043-1045
- https://doi.org/10.1364/ol.21.001043
Abstract
Optical gain was found in strongly confined CdSe quantum dots. As a result of a multitude of one- and two-electron–hole pair transitions, the gain region is broad and quasi-continuous and stretches below the absorption edge. We present a model for gain in a quasi-zero-dimensional quantum confined semiconductor system that agrees well with the femtosecond experiments.Keywords
This publication has 7 references indexed in Scilit:
- Spectral hole burning in the gain region of an inverted semiconductorPhysical Review B, 1993
- Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitionsJournal of the Optical Society of America B, 1993
- Exciton–LO-phonon couplings in spherical semiconductor microcrystallitesPhysical Review B, 1992
- Electronic structure and photoexcited-carrier dynamics in nanometer-size CdSe clustersPhysical Review Letters, 1990
- Theory of optically excited intrinsic semiconductor quantum dotsPhysical Review B, 1990
- Biexcitons in semiconductor quantum dotsPhysical Review Letters, 1990
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973