Reduced pressure and temperature epitaxial silicon CVD kinetics and applications
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10) , 1075-1081
- https://doi.org/10.1007/bf02651984
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Current Status of Reduced Temperature Silicon Epitaxy by Chemical Vapor DepositionJournal of the Electrochemical Society, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- A mechanism and kinetics of silicon growthJournal of Crystal Growth, 1985
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Analysis of silicon crystal growth using low pressure chemical vapour depositionJournal of Crystal Growth, 1983
- Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silaneApplied Physics Letters, 1982
- Rate-determining reactions and surface species in CVD of silicon: II. The SiH2Cl2-H2-N2-HCL systemJournal of Crystal Growth, 1980
- Rate-determining reactions and surface species in CVD of siliconJournal of Crystal Growth, 1980
- Kinetics of Silicon Growth under Low Hydrogen PressureJournal of the Electrochemical Society, 1978