Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements
- 16 June 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (2) , K147-K151
- https://doi.org/10.1002/pssa.2210890243
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Raman Detection of the Nitrogen Localized Mode in GaP:NPhysica Status Solidi (b), 1984
- Thermal expansion of GaP within 20 to 300 KPhysica Status Solidi (a), 1983
- Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice ParameterPhysica Status Solidi (a), 1982
- Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent MethodsCrystal Research and Technology, 1979
- First and second order Raman scattering in GaP to 128 kbarPhysics Letters A, 1974
- Nitrogen concentration in GaP measured by optical absorption and by proton-induced nuclear reactionsJournal of Applied Physics, 1974
- Localized vibrational modes due to isotopes of nitrogen in gallium phosphideJournal of Physics C: Solid State Physics, 1972
- Localized vibrational modes of light impurities in gallium phosphide. (Absorption spectra)Journal of Physics C: Solid State Physics, 1971
- Absorption by the vibrations of uncharged atomsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966