Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs
- 1 November 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (6) , 323-329
- https://doi.org/10.1007/bf02661880
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A Study on LPE Growth of In1-xGaxP1-yAsy(y ≃0) on (100) GaAs SubstrateJapanese Journal of Applied Physics, 1985
- Raman Piezospectroscopy in GaAs RevisitedPhysica Status Solidi (b), 1985
- LPE Growth of In1-xGaxP0.96As0.04 on GaAs Substrate by Two-Phase Melt Method.Japanese Journal of Applied Physics, 1985
- Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxyJournal of Applied Physics, 1985
- Raman Scattering Characterization of Residual Stresses in Silicon-on-SapphireJapanese Journal of Applied Physics, 1984
- The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eVSolid State Communications, 1982
- High-magnetic-field Zeeman spectroscopy of the 0.84-eV Cr-related emission and absorption line in GaAs(Cr): Experiment and theoryPhysical Review B, 1982
- Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substratesApplied Physics Letters, 1982
- The effect of elastic strain on energy band gap and lattice parameter in III-V compoundsJournal of Applied Physics, 1978
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973