A Schottky-Emitter Electron Source for Wide Range Lithography Applications
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S)
- https://doi.org/10.1143/jjap.32.5982
Abstract
A new 3-lens electron optical column using a Schottky emitter has been designed to perform very high-resolution lithography and also to produce reticles with good throughput. The theoretical performance has been computed from the source and lens characteristics and stochastic beam broadening. Measurements have shown excellent stability off the beam position and current. The measured current in a given spot-size is not as great as the theory predicts and further investigation is required. Examples are given of nanostructures formed by gold lift-off and of a DRAM reticle. The column is in use by research workers in the Technical University of Delft and examples of masks for Josephson junctions are shown.Keywords
This publication has 6 references indexed in Scilit:
- MEBES IV thermal-field emission tandem optics for electron beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Progress in E-beam mask making for optical and x-ray lithographyMicroelectronic Engineering, 1991
- Spot-size measurement in an electron-beam pattern generator.Journal of Vacuum Science & Technology B, 1988
- A thermally assisted field emission electron beam exposure systemJournal of Vacuum Science & Technology B, 1988
- Emission characteristics of the ZrO/W thermal field electron sourceJournal of Vacuum Science & Technology B, 1985
- A high-current, high speed electron beam lithography columnJournal of Vacuum Science and Technology, 1981