MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS
- 11 November 1999
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 11 (12) , 3578-3587
- https://doi.org/10.1021/cm9903632
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Metal−Organic Chemical Vapor Deposition of Indium Selenide Thin FilmsChemistry of Materials, 1998
- Chemical Vapor Deposition of Hexagonal Gallium Selenide and Telluride Films from Cubane Precursors: Understanding the Envelope of Molecular ControlChemistry of Materials, 1997
- Metalorganic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor: In[SeC(SiMe3)3]3Chemistry of Materials, 1995
- Synthesis and Characterization of Some Mixed Alkyl Thiocarbamates of Gallium and Indium, Precursors for III/VI Materials: The X-ray Single-Crystal Structures of Dimethyl- and Diethylindium DiethyldithiocarbamateChemistry of Materials, 1995
- Chemical vapor deposition of gallium sulfide: phase control by molecular designChemistry of Materials, 1993
- Metal–Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin filmsAdvanced Materials for Optics and Electronics, 1992
- Molecular design of single-source precursors for 3-6 semiconductor films: control of phase and stoichiometry in indium selenide (InxSey) films deposited by a spray MOCVD process using single-source reagentsChemistry of Materials, 1992
- Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phaseChemistry of Materials, 1992
- Crystal structures of tris(diethyldithiorcarbamato)-gallium(III) and indium(III)J. Chem. Soc., Dalton Trans., 1976
- Convenient preparation of base-free tributylgallium, dibutylgallium chloride, and butylgallium dichloride. Molecular association studies of butylgallium compounds in benzeneInorganic Chemistry, 1974