Metal–Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films
- 1 October 1992
- journal article
- Published by Wiley in Advanced Materials for Optics and Electronics
- Vol. 1 (5) , 229-233
- https://doi.org/10.1002/amo.860010504
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The preparation of (Al2O3)x(SiO2)y thin films using [al(OSiEt3)3]2 as a single‐source precursorAdvanced Materials for Optics and Electronics, 1992
- Structures and dynamic properties of aluminium-group 16 derivativesPolyhedron, 1990
- Oxygen- or sulphur-containing organoindium compounds for precursors of indium oxide and sulphide thin filmsPolyhedron, 1990
- Preparation and characterization of n- and i-butylindium thiolatePolyhedron, 1989
- Preparation of transparent and conducting indium oxide films by solution pyrolysis of dibutylindium thiolateThin Solid Films, 1988
- Sulfur as a surface passivation for InPApplied Physics Letters, 1988
- Tert-butylindium compounds. X-ray crystal structure of (tert-Bu2InOEt)2Organometallics, 1988
- Optical energy gaps of β-In2S3 thin films grown by spray pyrolysisJournal of Applied Physics, 1986
- Synthesis and photoelectrochemistry of In2S3Solar Energy Materials, 1986
- Preparation and Properties of InS Single CrystalsJapanese Journal of Applied Physics, 1977