New principle of contactless lifetime determination in semiconductor wafers
- 1 January 1981
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 52 (1) , 60-62
- https://doi.org/10.1063/1.1136447
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Theory of lifetime measurements in thin semiconductor layers with the scanning electron microscope; transient analysisSolid-State Electronics, 1980
- A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon WaferJapanese Journal of Applied Physics, 1979
- Determination of diffusion length and surface recombination velocity by light excitationSolid-State Electronics, 1978
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- VI-8 contactless measurement of minority carrier lifetime in siliconIEEE Transactions on Electron Devices, 1977
- Use of Schottky-diode collectors for SEM determination of bulk diffusion lengthsApplied Physics Letters, 1974
- Apparatus for Contactless Measurement of the Photomagnetoelectric EffectReview of Scientific Instruments, 1973
- Spectral Distribution of the Photomagnetoelectric Circulating Current in semiconductorsPhysical Review B, 1972
- Measurement of lifetimes in photoconductors by means of optical beatingInfrared Physics, 1966
- Measurement of Minority Carrier Lifetime in GermaniumProceedings of the IRE, 1952