Ultra-fast optoelectronic circuit usingresonant tunnelling diodes and uni-travelling-carrier photodiode

22 January 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (2) , 215-217
https://doi.org/10.1049/el:19980202

Abstract

An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80 Gbit/s optical signal into a 40 Gbit/s electrical signal at 7.75 mW.

Keywords

This publication has 2 references indexed in Scilit:

InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices
IEEE Electron Device Letters, 1996
A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition
Japanese Journal of Applied Physics, 1993