Nickel silicide formation in electroless plated films on silicon: Low temperature growth of Ni3Si2, morphology and electrical resistance
- 1 April 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 171 (2) , 277-290
- https://doi.org/10.1016/0040-6090(89)90635-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Morphology and kinetics of crystallization of amorphous V75Si25 thin-alloy filmsJournal of Applied Physics, 1986
- Formation of intermediate phases, Ni3Si2 and Pt6Si5: Nucleation, identification, and resistivityJournal of Applied Physics, 1986
- The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solutionThin Solid Films, 1986
- Reaction of silicon with films of CoNi alloys: Phase separation of the monosilicides and nucleation of the disilicidesThin Solid Films, 1985
- Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compoundsJournal of Applied Physics, 1984
- Tantalum silicide films deposited by dc sputteringJournal of Electronic Materials, 1981
- Characterization of Thin Film Molybdenum Silicide OxideJournal of the Electrochemical Society, 1980
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Epitaxial Growth of Nickel Silicide NiSi2on SiliconJapanese Journal of Applied Physics, 1974