Giant capacitance oscillations related to the quantum capacitance in GaAs/AlAs superlattices

Publisher Website
Google Scholar
Abstract
We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two‐dimensional (2D) electron system proposed by Luryi. A model based on well‐to‐well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance‐voltage (C‐V) characteristics reflects the quantum capacitance of the space‐charge region at the boundary between the domains (a novel 2D electron system).