An improved apparatus for surface photovoltage studies with a bimorphous piezoelectric Kelvin probe
- 1 March 1987
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 20 (3) , 273-276
- https://doi.org/10.1088/0022-3735/20/3/008
Abstract
An improved apparatus for measuring surface photovoltage spectra of semiconductors is described in which a boss-shaped Kelvin reference electrode is oscillated by using a bimorphic piezoelectric driver. A sensitivity of 0.1 mV is achieved. The apparatus is small in size, easy to handle and is compatible with the VSK 4-300 Leybold Heraeus optical cryostat allowing the range from liquid helium to room temperature to be covered.Keywords
This publication has 12 references indexed in Scilit:
- The Kelvin probe method for work function topographies: technical problems and solutionsVacuum, 1984
- Work function measurements during growth of ultra thin films of SiO2 on characterized silicon surfacesSolid-State Electronics, 1984
- Study of the GaAs–Au and Si–SiO2 interface formation by the Kelvin methodJournal of Vacuum Science & Technology B, 1983
- Electron-core-hole interactions at surfaces: An exactly soluble modelSurface Science, 1983
- Surface photovoltage spectroscopy with cleaved GaAs (110) surfaces: Spectroscopy of Cr2+Journal of Vacuum Science and Technology, 1981
- On the interest of a current amplifier associated with a Kelvin vibrating capacitorJournal of Physics E: Scientific Instruments, 1977
- Piezoelectric driven Kelvin probe for contact potential difference studiesReview of Scientific Instruments, 1976
- Electrostatically driven apparatus for measuring work function differencesReview of Scientific Instruments, 1976
- Electronic characteristics of “real” CdS surfacesSurface Science, 1972
- The effects of stray capacitance on the Kelvin method for measuring contact potential differenceJournal of Physics D: Applied Physics, 1970