High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules
- 20 May 2003
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 90 (20) , 206802
- https://doi.org/10.1103/physrevlett.90.206802
Abstract
A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.Keywords
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This publication has 18 references indexed in Scilit:
- Spin-based optical quantum computation via Pauli blocking in semiconductor quantum dotsEurophysics Letters, 2003
- Optically Driven Spin Memory in-Doped InAs-GaAs Quantum DotsPhysical Review Letters, 2002
- Optical RKKY Interaction between Charged Semiconductor Quantum DotsPhysical Review Letters, 2002
- Quantum Information Processing with Semiconductor MacroatomsPhysical Review Letters, 2000
- Exploiting exciton-exciton interactions in semiconductor quantum dots for quantum-information processingPhysical Review B, 2000
- Quantum Information Processing Using Quantum Dot Spins and Cavity QEDPhysical Review Letters, 1999
- Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor depositionApplied Physics Letters, 1998
- Quantum computation with quantum dotsPhysical Review A, 1998
- Quantum DotsPublished by Springer Nature ,1998
- Quantum Computations with Cold Trapped IonsPhysical Review Letters, 1995